Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator
Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor
Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D3TC02880A
PDF) Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator
Demonstrating applicability of the unusual gate current paths as an
High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C
Characteristics of the RRAM performance of TiON films prepared via (a)
Vertical Transport Control of Electrical Charge Carriers in Insulator/Oxide Semiconductor Hetero-structure. - Abstract - Europe PMC