TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

I-V curves for Non-graded base SiGe HBT

Photo-generation Rate generated in the model.

I-V curves for Non-graded base SiGe HBT

Subband profile along the device length (left), and current

Comparison between the current in a Ge quantum-well diode

Anil VOHRA, Professor (Full), M.Sc., Ph.D

Effect of 3 nm gate length scaling in junctionless double

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Modelled and experimental Hall voltage response in vertical Hall

Comparison between the current in a Ge quantum-well diode

CGG vs VGS curve of Si for SiO2 + HfO2 as gate oxide with metal

Photo-generation Rate generated in the model.

Energy band alignment with SiO2 + HfO2 as gate dielectric material