Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

A Novel Resistive Switching Identification Method through

Endurance characteristics. (a) P/E endurance of >10 3 cycles and

a) Comparison of the 50 Â 50 nm 2 device and the sub-10 nm tip

Metals, Free Full-Text

Materials, Free Full-Text

Study of Multi-level Characteristics for 3D Vertical Resistive

Improving endurance and reliability by optimizing the alternating

The schematic of the RRAM device of HfO 2 /TiO 2 /HfO 2

A) The self-compliance and enhanced endurance characteristics of

a) & (b) DC switching characteristics of TaO x and N-TaO x based

Micromachines, Free Full-Text

Improving endurance and reliability by optimizing the alternating

Nanomaterials, Free Full-Text

To the Issue of the Memristor's HRS and LRS States Degradation and

a) Comparison of the 50 Â 50 nm 2 device and the sub-10 nm tip