Figure 12 from Air spacer for 10nm FinFET CMOS and beyond

PDF) Improved Air Spacer for Highly Scaled CMOS Technology

Miniaturization of CMOS. - Abstract - Europe PMC

Short-channel effect comparison of InSe FETs and silicon FinFETs a

10 nm FinFET device demonstration of a 12 % reduction of effective

Figure 4 from FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits

Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era - ScienceDirect

Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era - ScienceDirect

Electronics, Free Full-Text

November, 2016

Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and Circuit Performance at 3 nm Node

Integration SpringerLink

Figure 8 from Air spacer for 10nm FinFET CMOS and beyond

a) Cross-sectional TEM image showing a spacerless device with raised